Iron Silicide (FeSi2) Micronpowder

Product Properties

Name:Iron Silicide
CAS:12022-99-0 
Molecular formula:FeSi2
Appearance: Gray black
Particle size:  325 mesh/custom
Melting Point:1410 ℃
Density:4.79g/cm3

Iron Silicide (FeSi2) Micronpowder Main Feature
  • Direct Bandgap Semiconductor: FeSi2 is a narrow direct bandgap semiconductor, which is a desirable property for optoelectronic applications, including photodetectors and light-emitting diodes (LEDs). This bandgap allows for efficient electron transition and light emission.
  • Photoconductivity: Exhibits increased conductivity when exposed to light, making it suitable for photovoltaic applications and photodetectors.
  • Thermal Stability: FeSi2 micronpowder maintains its structural and chemical integrity at high temperatures, making it suitable for high-temperature electronic applications and ensuring longevity and reliability in devices where it is used.

  • Compatibility with Silicon Technology: FeSi2 can be integrated into silicon-based semiconductor devices without significant interface issues, benefiting from the well-established silicon processing technology. This compatibility enhances the potential for its use in silicon-based electronics and solar cells.

Iron Silicide (FeSi2) Micronpowder Applications
  • Photovoltaic (Solar) Cells: FeSi2 is explored as a material for thin-film solar cells due to its suitable bandgap for photovoltaic applications. Its integration into silicon-based solar cells can enhance efficiency, particularly in absorbing infrared light, which is less efficiently converted by traditional silicon cells.
  • Thermoelectric Materials:Its semiconducting properties, along with reasonable electrical conductivity and thermal stability, make FeSi2 a candidate for thermoelectric materials, which convert heat into electricity. This application is particularly relevant for waste heat recovery systems in industrial processes and automotive applications.

  • Optoelectronic Devices: The direct bandgap semiconductor nature of FeSi2 allows its use in optoelectronic devices, including photodetectors and light-emitting diodes (LEDs). These devices benefit from FeSi2’s ability to efficiently emit and detect light, especially in the infrared spectrum.

  • Silicon-Based Electronics: Due to its compatibility with silicon processing technology, FeSi2 can be used in the fabrication of silicon-based electronic devices, potentially serving as a material for integrated circuits or other components where its semiconducting properties can be advantageous.